| 摘要 |
PURPOSE:To stably attain flattening, by forming a flattening film on the first conductive layer on an insulating film having a step so as to be etched and forming the second conductive layer to make it possible to simultaneously and selectively etch the first and the second conductive layers. CONSTITUTION:A lower layer aluminium interconnection 2 is formed on SiO21 which makes a foundation, and reflecting this, an insulating film 3 thereon has a step 32. The first conductive layer 4 is formed on the insulating film 3 having such a step followed by forming a flattening film 5 such as a resist on this first conductive layer 4. Next, the flattening film 5 and the first conductive layer are wholly etched to make the first conductive layer 4 into the almost flat surface and to form the second conductive layer 6 on the first conductive layer 4. Then, the first conductive layer 4 and the second conductive layer 6 are simultaneously and selectively etched for patterning so as to obtain a necessary interconnection.
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