| 摘要 |
PURPOSE:To eliminate a pattern distortion and a pattern position displacement by superposing an electron beam resist film and a thin conductive polymer film on a substrate, then sequentially exposing it to an electron beam, removing the film, and developing the resist film to form a pattern. CONSTITUTION:A semi-insulating GaAs substrate 1 is coated as an electron beam resist film 2 with a polymethylmethacrylate (PMMA) film, and prebaked. Then, a polystyrene ammonium sulfonate film is formed as a thin conductive polymer film 3, and heat treated. Then, a predetermined region is exposed with an electron beam. Further, the film 3 is removed with an organic alkaline developer for a positive type photoresist, the film 2 is eventually developed to form a pattern 4 on the PMMA film. Thus, this process can prevent a charging phenomenon without using a thin Si film to obtain an accurate resist pattern having no pattern distortion and no position displacement.
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