Network aiding the switching of a bipolar power transistor

摘要

The invention relates to a network aiding the switching of a power transistor of the bipolar type T1, this network being connected in parallel with the bipolar transistor. The network comprises a MOS transistor T2 whose breakdown voltage is equal to the VCBO voltage of the bipolar transistor, the gate control of the MOS transistor being offset with respect to the base control of the bipolar transistor so that the locus of the collector current of the bipolar transistor as a function of its collector-emitter voltage remains within the safe switching region of the bipolar transistor. <IMAGE>