| 摘要 |
PURPOSE:To satisfy electrical characteristics such as electro-migration resistance, working speed, etc., simultaneously by forming metallic wirings by metallic materials having materials partially different in response to electrical characteristics such as electro-migration resistance, working speed, etc. CONSTITUTION:An insulating film 3 is shaped onto the surface of a semiconduc tor substrate 1 to which an element region 2 is formed through a diffusion, etc. An insulating film 3 in an electrode section for the element region 2 on the insulating film 3 is bored, and a metallic wiring 4a connected to an electrode for the element region 2 and a metallic wiring 4b being connected to the metal lic wiring 4a and having a different material are shaped. The materials of these metallic wirings 4a, 4b are determined by electrical characteristics such as electro-migration resistance, working speed, etc. Since currents concentrate to the metallic wiring 4b in the periphery of a bonding section 41 bonded and connected to a section such as an external terminal, the metallic wiring 4b is formed by a metallic material, which differs from the material Al of the metallic wiring 4a in another section and electro-migration resistance of which is increased by adding Cu, Ni, Cr, Mg, etc. to into Al.
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