发明名称 CONTRAST ENHANCED MATERIAL FOR PATTERN FORMATION
摘要 PURPOSE:To increase contrast by incorporating a polymer which is soluble in aq. solvents and has lower absorption at about 249nm light, deriv. of acridine, and a solvent which dissolves both said polymer and photoreaction reagent into the titled material and forming this material in such a manner that the material is soluble in all aq. solvents regardless of whether there is photoirradiation or not. CONSTITUTION:The polymer has the lower absorption at about 249nm and the photoreaction reagent has a large ratio of a change in the transmissivity before and after exposing at 249nm. Both are soluble in the aq. solvents (for example, an aq. alkali soln. which is the developing soln for resist) regardless of whether there is photoreaction or not. The solvent has lower absorption at about 249nm. A water soluble polymer, novolak resin which has lower absorption at about 249nm, deriv. of a cyclic polyimide compd., etc., are used for this polymer. Resist pattern formation at the time of exposing and developing by DUV light and excimer laser light is thereby executed with high contrast, high resolution and high accuracy.
申请公布号 JPS63253933(A) 申请公布日期 1988.10.20
申请号 JP19870089446 申请日期 1987.04.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ENDO MASATAKA;SASAKO MASARU;OGAWA KAZUFUMI
分类号 G03F7/20;G03F7/09;G03F7/095;G03F7/11 主分类号 G03F7/20
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