PROCESS FOR FORMING RESIST PATTERN

摘要

PURPOSE:To improve resistance to plasma etching by using a specified organogermanium polymer for a resist material constituting a resist layer. CONSTITUTION:A organogermanium polymer expressed by formula I is used as a resist material constituting a resist layer. In formula I, each R1-R4 is either one of substituting alkyl group, aryl group, wherein the aryl group may be substituted or unsubstituted by alkyl group; each of (n) and (m) is a positive integer. Since the organogermanium polymer has high resistance to oxygen plasma etching, a satisfactory pattern may be formed in a two layer type resist system.