| 摘要 |
PURPOSE:To improve etching resistance, sensitivity, resolution, and contrast of a pattern forming material by using a material contg. a polymer having scarce absorption for light in a region near 249nm wavelength, a photoreactive compd. contg. Si and a specified linkage, and a solvent, regulating thereby the material to be soluble in an alkaline soln. only at the part exposed to light but insoluble at the part unexposed to light. CONSTITUTION:Novolak resin having scarce absorption for light in a region near 249nm wavelength (such as p-cresol novolak resin, o-chloro-m-cresol novolak resin, etc.) or resin of cyclic polyimide deriv. is used as the polymer to be used in this invention. A compd. contg. Si and a residue expressed by formula I is used in a photoreactive agent as a component for improving the etching resistance and improving the ratio of transmittance for light in a region near 249nm wavelength. By this constitution, a two layered pattern to be used for the exposure and development using DUV light or excimer laser light is formed with high sensitivity, high contrast, high resolution, and high precision. |
