| 摘要 |
PURPOSE:To enable a single crystal grain to be formed at a desired position, by selectively implanting nitrogen ions in a non-single-crystal semiconductor thin film on an insulating substrate and subjecting the semiconductor thin film to solid growth. CONSTITUTION:An Si thin film 12 is first deposited on an insulating substrate 11 and Si<+> ions 13 are implanted all over the Si thin film 12 so that the whole Si thin film 12 is once converted to non-single crystals. A mask 14 to be used for ion implantation is formed in a desired region on the Si thin film 12. N<+> ions 15 are implanted in the Si film 12 and the mask 14. The mask 14 is then removed and the Si thin film 12 is subjected to solid growth at a relatively low temperature of about 600 deg.C, whereby crystal grains are allowed to grow relatively fast in the regions 12a where no N<+> ions 15 have been implanted while crystal grains grow relatively slowly in the regions 12b where the N<+> ions 15 have been implanted.
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