| 摘要 |
PURPOSE:To form a flat interlayer insulating film, and to simplify a manufacturing process by forming a conductor onto a substrate, to which a first insulating film with a hole corresponding to a wiring pattern is shaped, and forming a second insulating film between the first insulating film through a spin-on glass method. CONSTITUTION:Al is evaporated from the upper section of the upper surface of a substrate 1 to which a hole 10 is shaped, and conductors 4 are formed onto each upper surface of the substrate 1 at the central section of the hole 10 and insulating films 2a. An organic solvent in which a silanol compound consisting of silica, phosphorus glass or borosilicate glass is dissolved into an alcohol organic solvent is spin-coated by a spinner so as to bury the hole 10 through a spin-on glass method, and baked, thus shaping a flattened SiO2 insulating film 5. The insulating film 5 is etched up to a level on the upper surfaces of the insulating films 2a, and lastly the unnecessary conductors on an insulating film 2 are removed through etching, thus acquiring a flattened interlayer insulating film consisting of the insulating films 2, 2a and 5. Such processes are repeated, thus obtaining two layers or more of a multilayer interconnection substrate.
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