| 摘要 |
PURPOSE:To obtain a high breakdown-strength MOSFET by a simple process by forming a low melting-point glass thin-film having a stepped shape onto the whole surface of a substrate, to which a gate electrode is shaped, and forming source-drain regions through ion implantation. CONSTITUTION:A gate oxide film 104 is shaped onto an Si substrate 101 with an element isolation region 102 and a well region 103, an Mo thin-film and a PSG thin-film are deposited, and a gate electrode 108 and a PSG pattern 107 are formed through patterning. A PSG film 109 is shaped onto the whole surface, and a PSG film 110 having a stepped shape is formed through heat treatment. Ions are implanted, using the PSG film 110 as a mask to shape source-drain regions 112, 114, and Al wirings 116 are formed. Accordingly, the impurity concentration of the regions 112, 114 is elevated continuously with separation from the gate electrode 108, thus realizing the increase of breakdown strength.
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