| 摘要 |
PURPOSE:To increase working speed, and to improve the degree of integration by constituting one part of a channel region of a semiconductor crystal except Si and inserting an Si single crystal film thinner than a 100 atomic layer between the channel region and a gate insulating film. CONSTITUTION:A P-type GaAs channel region 4 is formed selectively to a semi-insulating GaAs substrate 1, using a CVD-SiO2 film 26 as a mask. N-type GaAs source-drain regions 2, 3 are shaped, employing a CVD-SiO2 film 36 as a mask, the channel region 4 is exposed, and an Si single crystal thin-film 7 is grown selectively. The Si thin-film 7 is thermally oxidized to form a gate oxide film 5, contact holes are bored, and a gate electrode 6 and source-drain electrodes 12, 13 are shaped. Accordingly, an excellent insulating film can be formed, thus attaining the increase of working speed and the improvement of the degree of integration.
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