| 摘要 |
PURPOSE:To obtain a semiconductor substrate on which a polycrystalline silicon film whose face (100) has an orientation rate higher than 0.8 is formed by a method wherein, when the polycrystalline silicon film is formed by vapor growth, a carbon dioxide gas laser beam is applied to its growth surface. CONSTITUTION:A polycrystalline silicon film is formed on an amorphous insulation by vapor growth. At that time, a carbon dioxide gas laser beam is applied to its growing surface when the polycrystalline silicon film is made to grow. For instance, the film forming conditions of the polycrystalline silicon film are a pressure of 1.0 Torr and a temperature of 650 deg.C and the conditions of the carbon dioxide gas laser beam application are an output of 15 W and a scanning speed of 100 mm/sec. With this constitution, a semiconductor substrate on which a polycrystalline silicon film whose face (100) has an orientation rate higher than 0.8 is formed can be obtained.
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