发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To equalize a high voltage waveform impressed to a prescribed signal line by providing a transfer gate transistor of a high pressure switch and a prescribed signal line and controlling a high voltage transferred from a high pressure switch through the prescribed signal line to a memory transistor at the time of writing information by a gate voltage. CONSTITUTION:Between a high pressure switch 14 and a bit wire 3, a transfer gate transistor 30 is provided and a transfer gate transistor 31 is provided between a high pressure switch 20 and an control gate line 11. For these transfer gate transistors 30 and 31, a prescribed gate voltage is given at the time of writing the information, and the high voltage generated by high pressure switches 14 and 20 is transferred through the prescribed signal line such as the bit wire 3 and the control gate line 11 to a memory transistor. Thus, the waveform is shaped and the high voltage value can be maintained to a suitable constant value in accordance with the given gate voltage.</p>
申请公布号 JPS63251998(A) 申请公布日期 1988.10.19
申请号 JP19870087401 申请日期 1987.04.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 NOGUCHI KENJI;TERADA YASUSHI;NAKAYAMA TAKESHI;KOBAYASHI KAZUO
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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