| 摘要 |
PURPOSE:To improve the degree of integration by connecting an active base region and a base contact region by a base body just under a field oxide film and a reverse conductivity type region. CONSTITUTION:Si3N4 film patterns 20A-20C are formed onto a base body in which an n<-> type epitaxial layer is shaped onto a p-type Si substrate 1, to which an n<+> type buried layer 2 is formed, and the epitaxial layer is isolated by a p-type element isolation region 4 and used as a collector region 3. A collector contact region 8 is shaped through selective ion implantation and heat treatment, ions are implanted into an opening 23, and field oxide films 5A-5C and a p-type base connecting region 12 are formed through selective oxidation. The patterns 20A-20C are removed, and an active base region 7, a base contact region 9, an emitter region 10 and a collector contact region 11 are formed through selective ion implantation and heat treatment.
|
