| 摘要 |
PURPOSE:To lower the resistance of leading-out electrodes, and to increase the working speed of an element by using high melting-point metallic silicide films deposited through a CVD method as the base and emitter leading-out electrodes. CONSTITUTION:An n<+> epitaxial Si film 2 and an n<-> epitaxial Si film 3 are formed onto a p-Si substrate 1, an element isolation Si oxide film 4 is shaped, an Si nitride film 5, a P-doped tungsten silicide film 6, and an Si oxide film 7 are deposited onto the surface of the oxide film 4, and an opening section 14 for an emitter is formed to the films 6, 7. The film 5 is etched to an undercut shape, and the region of the undercut section is buried with a tungsten silicide film through a CVD method. A base region 8 is shaped by implanting B, and a contact hole for a collector is formed. P is implanted, electrodes 16, 17, 18 are shaped, and an n<+> emitter region 9 and an n<+> region 10 for connecting the collector are formed through heat treatment.
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