| 发明名称 |
Electron emission device. |
| 摘要 |
An electron emission device comprises a P-type semiconductor layer which emits electron injected into the P-type semiconductor layer by utilizing the negative electron affinity state. At least one of said N-type semiconductor layer and the P-type semiconductor layer is made to have a super-lattice structure.
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| 申请公布号 |
EP0287067(A2) |
申请公布日期 |
1988.10.19 |
| 申请号 |
EP19880105885 |
申请日期 |
1988.04.13 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SHIMIZU, AKIRA;TSUKAMOTO, TAKEO;SUZUKI, AKIRA;SUGATA, MASAO;SHIMODA, ISAMU;OKUNUKI, MASAHIKO |
| 分类号 |
H01J1/30;H01J1/308;H01J9/02 |
主分类号 |
H01J1/30 |
| 代理机构 |
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代理人 |
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