发明名称 FORMATION OF BUMP OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To make the thickness of gold plating thin and lessen drastically the cost by causing a member with gold plating on two surfaces facing each other to be joined by pressing onto an electrode takeoff part located at the semiconductor element surface with a thermo-compression bonding technique, thereby forming a bump of the semiconductor element. CONSTITUTION:The whole surfaces of members 1 are plated with gold and gold-plated layers 2 are formed. Metal masks 6 having holes at their parts corresponding to aluminum electrodes 5 are placed on a semiconductor element 3. The surfaces 1a of the members 1 plated with gold are arranged so that they may come into contact with the electrodes 5 and they are thermally pressed with a thermo-compression bonding jig 7. When the masks 6 are removed, a finished product where bumps are formed on the electrodes 5 of the element 3 is obtained. In this way, the gold-plated thickness becomes thin and its cost drastically decreases.
申请公布号 JPS63252447(A) 申请公布日期 1988.10.19
申请号 JP19870087310 申请日期 1987.04.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 BABA YASUYUKI
分类号 H01L21/60;H01L21/321 主分类号 H01L21/60
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