| 摘要 |
<p>PURPOSE:To make the stress which is set up in an electrode connection part small and prevent the electrode from being peeled off an the electrode connection part by mounting a bump electrode on an extension part of the first layer interconnection located on a semiconductor substrate without mounting it on an upper layer interconnection of a multilayer interconnection. CONSTITUTION:A silicon substrate 1 is covered by an oxide film 2 and semiconductor elements are accumulated at the substrate 1 and then, its substrate 1 is covered by a thick insulating film 3. Al films are deposited on the oxide film 2 as well as the insulating film 3 and the first layer interconnection 4 is formed by performing a patterning treatment. A pad electrode 5 is provided outside of an element part by extending the interconnection 4 and then, a Ti-Pd- Au bump electrode 8 is formed. The element part is coated by a layer insulation film 6 and the second layer interconnection 7 is formed. Finally, a passivation film 10 consisting of Si3N4 and the like is formed. This approach prevents the electrode from being peeled off at an electrode 8 connection part.</p> |
