发明名称 INPUT PROTECTIVE CIRCUIT OF MOS SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To increase a resistance value as much as possible by a constant chip occupying area by forming resistors by alternately bring metallic wiring layers and resistance layers into contact. CONSTITUTION:Resistance layers 11 and metallic wiring layers 12 are brought into contact through contact holes 13 alternately in a resistor 10. A contact resistance value in the contact holes 13 is made larger than the resistance value of the single resistance layer 1, and the greater part of the resistance value of the resistor 10 are occupied by the sum of the contact resistance values in the contact holes 13. Accordingly, the resistance value is increased as much as possible by a fixed chip occupying area.
申请公布号 JPS63252460(A) 申请公布日期 1988.10.19
申请号 JP19870089102 申请日期 1987.04.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 UMEKI TSUNENORI
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/02;H01L27/088;H01L29/78 主分类号 H01L27/04
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