发明名称 RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To form a resist pattern with an accuracy higher than that achieved by a screen printing method, by applying an active energy ray-curable resist ink to a copper-clad laminate polished to a specified surface roughness by dry offset printing, and irradiating the applied ink with active energy rays. CONSTITUTION:A copper-clad laminate is polished to a center line average roughness according to JIS B0601 (surface roughness) of at most 0.25mum, preferably, at most 0.20mum and a maximum height of a sampled part of at most 3.0mum, preferably, at most 2.0mum. With the polishing it is possible to form an etching resist pattern free of pinholes or the like by a dry offset printing method. An active energy ray-curable resist ink is preferably an ink capable of being cured by irradiation with active energy rays such as UV rays and electron rays.
申请公布号 JPS63252777(A) 申请公布日期 1988.10.19
申请号 JP19870087430 申请日期 1987.04.09
申请人 TOYO INK MFG CO LTD 发明人 NONOMURA TSUTOMU;SUZUKI KEIICHI;NAKANO KIMITAKA;KIKUCHI SHIGEO
分类号 B41M1/02;B41M1/28;G03F7/00;H05K3/06 主分类号 B41M1/02
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