| 摘要 |
PURPOSE:To reduce power consumption and attain high sensitivity and shorten a reset time, by connecting two FFs, each of which consists of two MOS transistors (TRs) of the same conduction type, different in polarity each other by MOS TRs to make the circuit constitution symmetrical. CONSTITUTION:The first FF is constituted with n-channel MOS TRs T1 and T2, and n-channel MOS TRs T3 and T4 are connected in parallel to TRs T1 and T2. The second FF is constituted with n-channel MOS TRs T5 and T6, and p-channel MOS TRs T7 and T8 are connected in parallel to TRs T5 and T6. Drain electrodes of TRs T1 and T2 and drain electrodes of TRs T5 and T6 are connected by n-channel TRs T9 and T10. Gate electrodes of TR T7-T10 are connected to a pulse generating source, and voltages to be compared are applied to gate electrodes 202 and 203 of TRs T3 and T4. |
