| 摘要 |
PURPOSE:To increase working speed by vapor-growing an silicide film to the side face section of an active region and forming a base leading-out electrode through patterning. CONSTITUTION:An n<+> type buried layer 2 is shaped to the surface of a p-type Si substrate 1, an n-type epitaxial layer 3 is grown onto the layer 2, an Si oxide film 4 and an Si nitride film 5 are deposited, and the layer 3, the film 4 and the film 5 are etched, leaving active regions. The surface of the substrate 1 is thermally oxidized, an Si nitride film 15 is deposited, and the nitride film on a horizontal plane is removed. A section between the active regions is oxidized selectively to form an Si oxide film 6, and a tantalum disilicide film 7 is deposited onto the side faces of the active regions, in which Si is exposed, on the substrate. The silicide film 7 is etched, leaving only the silicide film 7 in the periphery section of a base region, and B is doped to a base region 10 and the silicide film 7. An Si oxide film 8 is shaped, a contact hole is shaped, and As is doped to form an emitter region 11.
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