| 摘要 |
PURPOSE:To reduce manufacturing processes, and to prevent the formation of offset structure with a gate electrode of a P<+> type diffusion layer by shaping an N<-> type diffusion layer on the PMOS transistor side once and doping a P-type impurity to form the P<+> type diffusion layer. CONSTITUTION:A P well 102 is formed selectively to an NMOS transistor forming section in a semiconductor substrate 101 and an N well 103 to a PMOS transistor forming section, and an insulating film 104 for element isolation is shaped. Gate electrodes 105A, 105B are applied and formed, and N<-> type diffusion layers 106 are shaped. The oxide film formed onto the whole surface is etched to shape side walls, N<+> type diffusion layers 110 are formed in source- drain regions in the NMOS transistor, and a P-type impurity is added into source-drain regions in a PMOS transistor in high concentration to shape P<+> type diffusion layers 114. |
