| 摘要 |
<p>PURPOSE:To make the stress produced on the junction surface of an electrode small and prevent the electrode from peeling off at the junction surface of the electrode by forming a lead at the pad electrode which is formed on a semiconductor device directly through an insulating film and by forming its pad electrode of a plurality of laminated layers. CONSTITUTION:An Al film is evaporated on an oxide film 2 and an insulating film 3 and the first layer interconnection 4 is formed by performing a patterning. A pad electrode 5 is formed at an end part of the interconnection which is extended on the insulating film 3. After interlayer insulation films 6 such as the oxide film and application film and the like are coated and a through hole part 7 and the insulation film 6 on the electrode 5 are removed by etching, the second interconnection 8 is formed. The electrode 9 prepared by a two-layer interconnection metal is formed by laminating it on the electrode 5. A passivation film 10 is deposited on the surface of the second layer interconnection 8 and a part covering the electrodes 5 and 9 is removed. This approach prevents the electrode from peeling off at the junction surface of the electrode 9.</p> |
