| 摘要 |
<p>PURPOSE:To obtain a multi-circuit photo-interrupter which is simple in structure and low in cost, by mounting the required number of light-emitting elements and photodetectors on a single lead frame and next molding them unitedly. CONSTITUTION:Light-emitting element chips 3 are mounted on lead frames 2 and also other light-emitting element chips 5 are mounted on the similar leads. When GaAs infrared emission is used for the light-emitting element, the leads 2 serve as common cathodes. Electrodes on chip surfaces are wire- bonded with leads 4 and 6 so as to function respectively as anode leads. A photodetector is mounted on a common lead 9 and its front electrodes are wire-bonded with leads 10 and 13. When a silicon NPN phototransistor is used as this photodetector, the lead 9 functions as a common collector lead, and the leads 10, 13 function as emitter leads. When an interruption matter is moved in the directions of arrows, light is interrupted or passed, so that a photocurrent is drawn out in the form of a large or small signal.</p> |
