| 摘要 |
PURPOSE:To have both high photosensitivity and the facility of signal processing, by composing a means for electrically scanning a photodetector of a means in which voltages are applied sequentially to a transparent electrode, and further by composing a photoelectric conversion film of an amorphous silicon film. CONSTITUTION:A polycrystal silicon thin film 2 is formed on a glass substrate 1, and (n) or (p) regions are formed thereon as source and drain regions 3, 4. A photoelectric conversion film 7 is formed on a gate electrode 6 so that the gate electrode 6 is structured to also serve as a lower electrode of the photoelectric conversion film 7. When a voltage is applied to a transparent electrode 8, light is made incident to the photoelectric conversion film 7. When a resistance is low at that time, the gate electrode 6 becomes equipotential to the transparent electrode 8 and so a gate voltage VG is equivalently applied to the gate electrode 6, so that FET is turned on to make a current flow between the source and drain. A large signal current can be hence obtained and a signal source impedance can be lowered and also S/N ratio drop due to parasitic capacity can be suppressed accordingly. |
