| 摘要 |
PURPOSE:To form a uniform pattern size even for the pattern where a difference in size in the transverse direction and in the longitudinal direction is large by a method wherein a vapor whose pressure of an organic chemical or an inorganic chemical has been kept constant is blown at high speed, uniformly on the whole surface of a semiconductor device substrate whose surface is coated with a photosensitive resin in the manner that the speeds of dissolution of the photosensitive resin and a decomposition reaction are made uniform. CONSTITUTION:A three-way valve 101 is closed; an alkaline aqueous solution 104 is gasified after it has been heated with a heater 105 and the wave motion has been caused with an ultrasonic generator 107. Then, this gas is guided to a heat exchanger 102; the alkaline aqueous solution is condensed; a vapor pressure is made uniform. Then, a semiconductor device substrate 203 whose surface is coated with a positive-type photoresist is held on a chuck 204 whose temperature is kept constant with a thermostatic chamber 208; the three-way valve 101 is opened; the gas of the alkaline aqueous solution which has been made uniform through a mash 202 inside a cup 201 is blown to the whole surface of the semiconductor device substrate 203; the positive-type photoresist on the surface of the substrate is decomposed selectively. After that, pure water is dropped from a nozzle 210 and the surface of the substrate 203 is cleaned. |
