| 摘要 |
PURPOSE:To improve an interface between a gate insulating film and a recrystallization semiconductor film and besides to improve a flat band voltage, by performing an annealing process in an atmosphere of oxygen before piling a gate insulating film. CONSTITUTION:A semiconductor film 2 is piled on an insulating substrate 1 and annealed with beam energy 3. In succession, a low resistance semiconductor film 4 of 0.1 OMEGAcm or less in specific resistance is piled on a recrystallization semiconductor film 21, and only the low resistance semiconductor film 4 on source and drain regions is made to remain and activated by a beam annealing method. when a N channel TFT is manufactured, N type impurities are added. When a P channel TFT is manufactured, P type impurities are added. Thereafter photo-lithography is used to etch the recrystallization semiconductor film 21 and then to perform element isolation and next annealing is performed in an atmosphere of oxygen 5. This oxygen annealing may be performed at 400 deg.C to 600 deg.C for thirty minutes or more. A surface of a channel part in the recrystallization semiconductor film 21 is thus oxidized thinly, so that an interface of the channel part can be improved. |
