| 摘要 |
PURPOSE:To enhance the workability and to stabilize a process by preparing contact parts between a semiconductor substrate and wiring layers or between wiring layers in the same shape and size if they are formed simultaneously on the same semiconductor substrate. CONSTITUTION:When all contact parts 2 having the same shape and size are formed simultaneously on a semiconductor substrate, they are formed under the same optimum conditions. If the size is too small, however, relatively large currents may destroy contacts, and the contact resistance will increase. As a countermeasure to this, it is enough to install two or more contact parts 2 of the same size. Regarding a part where a potential of a semiconductor substrate 101 is taken, a conductivity type of a diffusion layer 102 coming into contact with a metal wiring layer 105 is the same as that of the semiconductor substrate; a leakage current or the like is not generated. Accordingly, there occurs no problem even when the size of the contact parts only in this part is made bigger than that in other parts. By this setup, it is possible to enhance the workability and to stabilize a process.
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