| 摘要 |
PURPOSE:To form a high-quality coated film having an excellent electrical characteristic at a high growth rate by keeping the wall of a reaction furnace for vapor growth at a temp. lower than the temp. at which film deposition is caused and higher than the temp. at which the raw gas is condensed. CONSTITUTION:The raw liq. material 4 in a vaporization chamber 3 is heated by a heater 72, gaseous Ar is introduced from an inlet pipe 13 to bubble the material, and the material is vaporized and introduced into a reaction chamber 5. Meanwhile, O2, gaseous Ar, etc., are supplied to the reaction chamber 5 from gas inlet pipes 11 and 12, and a coated film is formed on a wafer 8 heated by a heater 73. At this time, the reaction chamber 5 is formed by an inner wall 52 and an outer wall 51, the oil 61 heated by a heating device 9 is circulated between the inner wall 52 and the outer wall 51, and the wall of the reaction chamber 5 is kept at a temp. lower than the temp. at which film deposition is caused and higher than the temp. at which the raw gas is condensed on the wall of the reaction chamber. By this method, a high-quality film having an excellent electrical characteristic can be formed, and the film growth rate is increased.
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