| 发明名称 |
Testable variable-threshold non-volatile semiconductor memory |
| 摘要 |
A variable-threshold non-volatile memory in which a potential falling between a selection and a non-selection level is applied to the gates and the resultant drain current is measured to determine if one of the transistors has an abnormal threshold voltage.
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| 申请公布号 |
US4779272(A) |
申请公布日期 |
1988.10.18 |
| 申请号 |
US19860923238 |
申请日期 |
1986.10.27 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOHDA, KENJI;TOYAMA, TSUYOSHI;ANDO, NOBUAKI |
| 分类号 |
G11C17/00;G11C16/34;G11C29/00;G11C29/02;G11C29/12;G11C29/50;(IPC1-7):G01R31/28 |
主分类号 |
G11C17/00 |
| 代理机构 |
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