发明名称 |
CONTACT VIAS IN SEMICONDUCTOR DEVICES |
摘要 |
<p>CONTACT VIAS IN SEMICONDUCTOR DEVICES A glass reflow step to round off sharp edges of contact vias is typically included in processes for making integrated-circuit devices. In the course of making such devices with closely spaced vias, it has been found that unacceptable overhangs occur on the sidewalls of the vias. Neither changes in the composition of the glass nor modifications in the processing parameters of reflow were effective to avoid the overhang phenomenon. In accordance with the invention, it has been discovered that the overhang problem can be consistently avoided if the ratio of glass thickness to via-to-via spacing is about ? 0.393. (FIG. 2).</p> |
申请公布号 |
CA1243422(A) |
申请公布日期 |
1988.10.18 |
申请号 |
CA19860521705 |
申请日期 |
1986.10.29 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
LEVY, ROLAND A.;NASSAU, KURT |
分类号 |
H01L21/768;H01L21/302;H01L21/3065;H01L21/31;H01L21/3205;H01L23/485;H01L23/532;(IPC1-7):H01L27/04 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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