| 摘要 |
PURPOSE:To form a preferable Schottky junction by composing a base electrode of an epitaxially grown MoAl12 or WAl12 on a silicon substrate having a plane (110). CONSTITUTION:An MoAl12 film or WAl12 film 3 epitaxially grown on a silicon substrate 1 having a plane (110) is used as a base electrode, and an epitaxial silicon film 4 is further formed thereon. Accordingly, the film 3 of the base electrode is epitaxially grown on the substrate 1 and the film 4. Thus, a preferable Schottky junction is obtained to improve the electric characteristics of a transistor. |
