| 摘要 |
PURPOSE:To eliminate the etching of a necessary ZnSe layer by laminating a silicon oxide or silicon nitride film on the layer, punching it in a stripe state, and etching the layer at the top of a rib with an etchant which contains nitric acid, hydrochloric acid and water. CONSTITUTION:In a semiconductor laser of a structure having a riblike optical guide 108, in which the side of the guide 108 is buried with a ZnSe layer 107 of II-VI compound semiconductor and having a stripelike electrode 109 for limiting a current path at the top of the guide 108, the steps of etching the layer 107 at the top of the rib for forming the electrode 108 include laminating a silicon oxide or silicon nitride film 208 on the layer 107, punching the film 208 in a stripe state, and etching the layer 107 at the top of the rib with an etchant which contains nitric acid, hydrochloric acid and water. Thus, the neces sary layer 107 can effectively be remained.
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