| 摘要 |
PURPOSE:To prevent an increase in man-hour in which completion of this product is achieved, by perforating an insulation film, which is interposed between wiring layers, on a resistance element so as to form resistance element electrodes thereon, and next by forming structure in which a resistance value of the resistance element can be changed in a wiring process. CONSTITUTION:A buried layer 22, an N type resistance region 23, a P type insulation layer 24, and a P type resistance layer 25 are formed on a semiconductor substrate 21, and next an insulation film 26 to separate a diffusion layer from a wiring layer is formed thereon. The insulation film 26 directly on the P type resistance layer 25 is perforated to compose a wiring layer. A first wiring layer 27, and a layer insulation film 28 between the first and second wirings are formed, and next the insulation film 28 on the P type resistance layer 25 is perforated at both its ends so as to form electrodes 32 of single crystal silicon resistance elements there. Since the insulation film between the diffusion layer and the wiring layer is perforated in a size of the resistance element region and farther the layer insulation film formed thereon between the wirings is used to compose the electrodes of resistance structure, position of the resistance electrodes can be easily changed only in a wiring process and also the resistance value can be arbitrarily determined accordingly.
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