| 摘要 |
PURPOSE:To prevent a scattered photoresist from readhering to a semiconductor substrate by a method wherein a length of a gap between an eave at a tip part of a conical-shaped barrier at an upper cup and a plane face of the semiconductor substrate is set within a prescribed range. CONSTITUTION:A semiconductor substrate 1 which is held by a rotary chuck 8 is covered with a conical-shaped barrier 4; a lower part 4c of the barrier 4 is connected to a discharge hole 5; while an annular eave 4b is hung at the inside of a tip part of the barrier 4. A gap (t) which is formed between a lower end edge c of the eave 4b and the substrate 1 is set to range 3-10 mm, desirably to range 4-6 mm. When a photoresist is coated on the semiconductor substrate 1, a surplus photoresist is scattered due to a centrifugal force by a high-speed revolution; the surplus photoresist is caught by the eave 4b; thereby it is made possible to prevent the photoresist from readhering to the semiconductor substrate 1.
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