| 摘要 |
The device provided is a GaInAsP/InP laser, of the buried heterostructure type, fabricated by a two-step liquid-phase epitaxy technique. The active region is defined by a mesa etch to achieve low threshold current and a single transverse optical mode. The mesa is subsequently buried by a second step of liquid-phase epitaxy for optical and current confinement. A low bandgap heterobarrier is employed to reduce leakage current near the active region at high current biases. A contact layer is grown directly over a majority carrier confining clad layer to reduce defects in the crystal face on the side of the clad layer, and thereby further reduce leakage current.
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