| 摘要 |
PURPOSE:To prevent the generation of a leak current between each of individual electrode groups, by shielding perfectly an unnecessary part for irradiation between discrete electrodes neighboring with each other via amorphous silicon. CONSTITUTION:On a substrate 1, a reed screen-type discrete electrode group 4 is made in the form of a film, by applying a metal member for forming a Schottky barrier. On the discrete electrode group 4, amorphous silicon 3 is overlapped to form a film. On the amorphous silicon 3, a film of common electrode 6 is formed, composed of a light-shielding type metal film in the form of a linear belt having a specified width in the rectangular direction to the discrete electrode 4. The common electrode 6 is provided with a slit 7 in the longitudinal direction, and light is introduced through the slit 7. A dimension L part and a dimension L' part of the discrete electrode groups 4 neighboring with each other via the amorphous silicon 3 can be completely shielded, so that the generation of a leak current between each of the discrete electrode groups 4 can be prevented. |
