| 摘要 |
PURPOSE:To obtain a high-purity growth layer precisely controlled in atom molecule layer unit by using a specified structure in the title device for growing the thin film epitaxial layer of a III-V compd. semiconductor. CONSTITUTION:The following structure is used in the device for vapor phase epitaxy used for growing the thin film epitaxial layer of a III-V compd. semiconductor. Namely, plural inner quartz tubes 4 and 8 vertically placed in an outer quartz tube 10 adjacent to each other, a substrate holder 7 for closing the upper opening end faces of the inner quartz tubes 4 and 8 with the lower surface and for selectively setting the substrate crystal 6 charged in a part of the lower surface in the upper opening end faces of the inner quartz tubes 4 and 8 along with the rotation of the holder 7, a boat 2 set at the top of one inner quartz tube (e.g., 4) and holding a group III metal (e.g., Ga source 1) on its bottom provided with pores 2a, a pipe 3 for supplying hydrogen halide to the bottom of the boat 2 through the inner quartz tube 4, a pipe 9 for supplying a halide (e.g., AsH3) into the other inner quartz tube (e.g., 8), exhaust pipes 5 for the inner quartz tubes 4 and 8, and a resistance heating means 11 for heating the source 1 and the crystal 6 at the same temp.
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