| 摘要 |
PURPOSE:To provide a thin film having desirable resistance to X-ray damage, by employing a particular material and setting a film forming temperature, namely a substrate temperature in a range of 200-600 deg.C. CONSTITUTION:A material consisting of four or more elements including carbon is deposited by chemical vapor deposition (CVD) through electronic cyclotron resonance (ECR) plasma process. The material may be BNC:H, BCSi:H, SiCN:H or BNCSi:H for example and a temperature of a substrate is set in a range of 200-600 deg.C. A film thus deposited at a substrate temperature of 600 deg.C already presents tensile stress and, at 800 deg.C, it presents compressive stress and is unusable. If a substrate temperature is 200 deg.C or below, the ECR plasma can provide desirable decomposition efficiency but boron that can not be deposited on the substrate positively at such temperatures is apt to be combined with water in the atmosphere and to deteriorate the quality of the resulting film. By setting the substrate temperature in the range of 200-600 deg.C, the resistance to X-ray damage can be increased twice or more in comparison with those obtained by ordinary high-frequency plasma CVD process. |
