| 摘要 |
<p>Thin film transistors offering fast switching and high frequency operating characteristics and suitable for use as picture element switches and/or integrated drive circuit elements in an active matrix addressed display device, e.g. an LC-TV, have a vertical type structure and comprise source and drain electrodes (11, 16) spaced in a direction generally orthogonal to an insulative support (10) and offset with respect to one another laterally of the support so as substantially not to overlap, a semiconductor layer (20) providing a channel region extending substantially vertically of the support between the electrodes, and a gate electrode (22) adjacent the channel region and spaced therefrom by a gate insulator layer (21). The electrodes (11, 16) are spaced by a step defining insulative layer (15) or alternatively a semiconductor layer, (40), part of which constitutes the channel region. Fabrication methods and display devices incorporating such transistors are described.</p> |
