| 摘要 |
PURPOSE:To increase the gamma-value without decreasing the light response speed, by radiating a light more than or equal to a specified amount, whose wavelength is shorter than the threshold wavelength in the longer wavelength side with respect to the absorption-end wavelength, on a photo sensor at a high temperature after a protective film is formed. CONSTITUTION:A thin film mainly composed of CdS, CdSe or these solid solution CdS-CdSe is formed on an insulative substrate. This thin film is exposed to the vapor of CdCl2 under a high temperature, and photo-electrically activated. Then facing electrodes are arranged, and a protective film is formed. After the protective film is formed, a photo-sensor is irradiated under a high temperature with a light more than or equal to a specified amount. The wavelength of said light is shorter than lambdaL which is a threshold wavelength of the longer wavelength side with respect to the absorption-end wavelength lambdaE. Thereby, the gamma-value can be increased, without deteriorating the merit that the photo current value of a photoconductive type photo-sensor is large, and without making the photo response speed of photo current slow.
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