| 摘要 |
PURPOSE:To realize high density and high degree integration, by using a silicon substrate of high impurity concentration, constituting a memory cell in a rectangular groove-type cell structure, applying each rectangular side-wall to the memory cell so as to have the bit number corresponding to the number of side-walls of the groove. CONSTITUTION:A rectangular groove-type memory cell part 5 is formed on a silicon semiconductor substrate 2 on a high impurity concentration substrate 1. Memory is formed on each of the side-walls 6 of the rectangular groove-type memory cell part 5. In order the groove 5 of the rectangular groove-type memory cell is formed so as to reach the high impurity concentration substrate 1, the punch through phenomenon between each of cells can be prevented. Further, each side-wall 6 of the rectangular groove 5 is used to constitute four bits, for example, by one groove, so that high degree integration and high density constitution are enabled. |
