| 摘要 |
PURPOSE:To form an excellent recrystallization interface by combining the etching of the surface of a substrate by a specified method and the epitaxy of a III-V compd. semiconductor in a high vacuum in the molecular beam epitaxy of the III-V compd. semiconductor. CONSTITUTION:In the molecular beam epitaxy of a III-V compd. semiconductor, the ionization or activation (e.g., by ECR ion source) of a mixture of a reactive gas (e.g., Cl2) and a gaseous compd. contg. a group V element to etch the surface of a substrate in a high vacuum and the epitaxy of a III-V compd. semiconductor (raw materials are introduced from cells 5, 6, and 7) are respectively carried out once at least. By this method, the desorption of the group V element from the crystal surface due to etching can be prevented.
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