| 摘要 |
PURPOSE:To reduce the bonding failure at the time of a wire bonding and enhance the bonding strength by performing an ion milling of the exposed electrode surface undergoing a wire bonding, thereby removing the dirt and degenerate materials and also making the irregularities of the electrode surface severe. CONSTITUTION:The whole surface of a semiconductor device 2 formed on a semiconductor substrate 1 is covered with a plasma nitride film 3, the regions except for the region experiencing a wire bonding is covered with a resist mask 4, and the plasma nitride film 3 in the region which is not covered with the wire bonding is etched away, thereby exposing the electrode surface to which the wire bonding is applied. Then, by performing an ion milling of the exposed electrode surface, the dirt of the exposed electrode surface and the degenerate materials are removed, and also the irregularities of the surface is made severe. Thereafter, the resist mask 4 is removed. This will eliminate the bonding failure of the bonding wire or the stripping of the bonding wire due to a weak bonding strength. |
