| 摘要 |
<p>PURPOSE:To eliminate defective switching and to improve the reliability of the titled element, by forming a 1st electrode layer in a laminated body, in which >=2 layer sections are piled up, and making at least one layer section opaque. CONSTITUTION:On a lower substrate 42, a 1st electrode layer 11 which is used as a scanning electrode is formed on one side and another 1st electrode layer 12 which is used as a lead layer for picture element electrode is formed on the other side which is separated from the location of the electrode 11. The topmost parts 11a and 12a the 1st electrode layers 11 and 12 are opaque layers made of high-dope n-type amorphous silicon and the intermediate parts 11b and 12b are opaque layers made of chromium. The bottommost parts 11c and 12c of the layers 11 and 12 are transparent layers made of ITO. Light advancing from the base plate 42 side is intercepted by the opaque layer parts. Therefore, occurrence of defective switching caused by the optical deterioration of a semiconductor layer 21 put on the 1st electrode layers 11 and 12 in an early stage can be prevented.</p> |
