发明名称 MICROWAVE PLASMA CVD SYSTEM
摘要 PURPOSE:To enable a substrate having a larger area to be treated and to improve productivity, by providing microwave reflection plates for radiating microwaves efficiently, within a vacuum bell-jar for receiving the substrate. CONSTITUTION:A microwave plasma CVD system of the present invention comprises a large microwave sealed chamber 5 within which a vacuum bell-jar 6 for receiving a substrate 8 to be treated is provided. Within the bell-jar 6, there are provided microwave reflection plates 7 for radiating microwaves efficiently. The microwave reflection plates 7 can be regulated with respect to its angle, position or the like such that diffused microwaves are concentrated to the bell-jar 6, whereby the electric field of microwaves within the bell-jar 6 can be controlled properly. Accordingly, it is possible to generate larger plasma 10, which enables a substrate having a larger area to be treated, Therefore, the productivity is improved.
申请公布号 JPS63249330(A) 申请公布日期 1988.10.17
申请号 JP19870084151 申请日期 1987.04.06
申请人 SEIKO INSTR & ELECTRONICS LTD 发明人 MORIYA TSUTOMU
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
代理机构 代理人
主权项
地址