| 摘要 |
PURPOSE:To scale down the cell size, and to reduce the occupying area of a storage element by forming a floating gate onto the same plane, surrounding a control gate in a floating gate type EEPROM semiconductor device. CONSTITUTION:A control gate 7 is shaped into a specified region in an insulating film 4 formed onto a semiconductor substrate 1, and a floating gate 5 is shaped onto the same plane, surrounding the gate 7, thus forming an EEPROM. According to the gate constitution, even when the area of a cell is reduced, the area of the floating gate is increased, thus scaling down the size of the cell, then diminishing the occupying area of a storage element. |
