发明名称 PRODUCTION OF THIN FILM
摘要 PURPOSE:To form the title uniform thin film with less defects by using a substrate in contact with a pure water at the contact angle theta>=80 deg., and forming thin film spread over the water surface on the substrate. CONSTITUTION:The thin film is formed on the hydrophobic substrate 1 in contact with pure water 4 at the contact angle of theta>=80 deg.. Accordingly, the thin film combines with the substrate 1 by the van der Waals force, and the water causing defects are practically excluded. The contact angle is more preferably controlled to 90-130 deg.. The substrate 1 having hydrophobicity imparted by a silane coupling agent is used, the substrate 1 is moved toward a vapor-liq. interface, and a first layer is formed on the substrate 1 by the Langmuir- Blodgett's technique. By this method, a uniform thin film with less defects can be formed.
申请公布号 JPS63248474(A) 申请公布日期 1988.10.14
申请号 JP19870168555 申请日期 1987.07.08
申请人 TOSHIBA CORP 发明人 NAITO KATSUYUKI;EKUSA TAKASHI;OKAMOTO MASAYOSHI
分类号 H01L21/368;B05D1/20;H01L51/05;H01L51/40 主分类号 H01L21/368
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