| 摘要 |
<p>PURPOSE:To increase surge-resistant strength by removing a section, where an electric field particularly concentrates, and separating an N<+> diffusion layer forming an ohmic contact with a base electrode at a specific distance from an isolation diffusion layer and a collector diffusion layer. CONSTITUTION:A P collector diffusion layer 6 surrounds the periphery of a P emitter diffusion layer 5 at a regular interval, and an N<+> diffusion layer 7 is separated from an isolation diffusion layer 2 and the collector diffusion layer 6 by 10mum or more, and the periphery of the layer 7 is made approximately parallel with the opposed sides of the isolation diffusion layer 2 and the layer 6 respectively. Consequently, there exists no section where an electric field particularly concentrates, and spaces among the layer 7 and the regions 2, 6 are separated by 10mum or more, thus improving surge-resistant characteristics. The increase of the resistance of an N base layer 4 by the formation of the layer 6 between the layer 7 and the layer 5 is corrected by an N<+> buried layer 3, one end of which extends up to a section just under the layer 5.</p> |
